Fast silicon p doped low temperature bolometer

The construction of a fast silicon p doped low temperature bolometer is described. It is a 5 × 5 × 0.3 mm Si <100 > n-type chip whose surface has been implanted with p doses of the order of 1018cm-3. The bolometer has a response time better than 1 ?s, a responsivity of 104VW-1 and a NEP of 3x10-12 W(Hz)-1/2.