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A memristor-based pixel implementing light-to-resistance conversion

Articolo
Data di Pubblicazione:
2016
Abstract:
This letter reports a pixel architecture that implements a light-to-resistance encoder exploiting the properties of a memristor. A light-to-frequency (L2F) converter is adopted to drive a memristor with pulses, thus changing its resistance according with the light intensity. In a conventional L2F implementation, a binary counter is needed to store the number of pulses generated within the exposure time (T-i). In the proposed circuit, the binary counter has been replaced with an analog counterpart, made of a single memristor. This turns into a smaller pixel pitch, compared with an all-CMOS solution and analog nonvolatile characteristics. The proposed circuit has been simulated in a 3.3 V, 0.35 mu m CMOS process, while the memristor behavior relies on the HP model. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
image sensors; light; architecture; modulators
Elenco autori:
Iannotta, Salvatore
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/403415
Pubblicato in:
OPTICAL ENGINEERING (BELLINGHAM, PRINT)
Journal
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URL

https://www.spiedigitallibrary.org/journals/Optical-Engineering/volume-55/issue-2/020501/A-memristor-based-pixel-implementing-light-to-resistance-conversion/10.1117/1.OE.55.2.020501.short
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