Microcrystalline Silicon, Deposited from SiF4 plasmas: Film anatomy from electrical and optical properties.
Conference Paper
Publication Date:
2000
abstract:
The multilayer structure of mc-Si:H films deposited from SiF4 plasma system has been investigated by spectroscopic ellipsometry (SE), standard Constant Photocurrent Method (s-CPM) and dark conductivity measurements. The comparison of the electrical and optical properties of these samples with mc-Si:H films grown by sylane has been also carried out.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Microcrystalline silicon; Ellipsometry; standard Constant Photocurrent Method
List of contributors:
Cicala, Grazia
Book title:
16th European Photovoltaic Solar Energy Conference Proceedings