Microcrystalline Silicon, Deposited from SiF4 plasmas: Film anatomy from electrical and optical properties.
Contributo in Atti di convegno
Data di Pubblicazione:
2000
Abstract:
The multilayer structure of mc-Si:H films deposited from SiF4 plasma system has been investigated by spectroscopic ellipsometry (SE), standard Constant Photocurrent Method (s-CPM) and dark conductivity measurements. The comparison of the electrical and optical properties of these samples with mc-Si:H films grown by sylane has been also carried out.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Microcrystalline silicon; Ellipsometry; standard Constant Photocurrent Method
Elenco autori:
Cicala, Grazia
Link alla scheda completa:
Titolo del libro:
16th European Photovoltaic Solar Energy Conference Proceedings