Study of Power Gain Capability of CNTFET Power Amplifier in THz Frequency Range

In this paper we study the application of a single-CNTFET as power amplifier in the THz frequency range, using a CNTFET model, already proposed by us. We show that the device has, within stable condition, a Maximum Gain of at least 29 dB at frequencies below 30 GHz, decreasing to 20 dB at 800 GHz and reaching 18 dB at 1 THz. Through the analysis of a simple example, we show that it is possible to obtain a stable amplifier with tuned matching with a gain near the Maximum Gain at 1 THz. Finally we show that the matching of this device requires high ratio which could be hard to implement at 1 THz.