Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green's function formalism. The simulator is validated through a comparison with experimental results.