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All-silicon optically-interrogated power sensor for microwaves and millimetre waves

Academic Article
Publication Date:
1999
abstract:
A new non-disturbing optically interrogated silicon sensor for measuring electromagnetic power in the microwave and millimetre-wave range is presented. A prototype was realised and then tested in the microwave frequency range 2.5-18GHz. A minimum detectable electromagnetic power density of approx. 1.4mW/cm 2 was measured. Higher performances are expected, according to simulations, in optimised devices.
Iris type:
01.01 Articolo in rivista
Keywords:
Coaxial cables; Electromagnetic compatibility; Electromagnetic fields; Microwave circuits; Microwaves; Millimeter waves; Monochromators; Refractive index; Silicon wafers; All silicon optically interrogated power sensor; Fabry-Perot optical cavity; Optical sensors
List of contributors:
Rendina, Ivo; Iodice, Mario
Authors of the University:
IODICE MARIO
RENDINA IVO
Handle:
https://iris.cnr.it/handle/20.500.14243/217685
Published in:
ELECTRONICS LETTERS
Journal
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http://www.scopus.com/inward/record.url?eid=2-s2.0-0033191771&partnerID=40&md5=be2404f79382b20caae1f5e70d1b8afc
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