Radiation hardness of silicon photomultipliers under 60Co ?-ray irradiation

Articolo
Data di Pubblicazione:
2014
Abstract:
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co ?-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Gamma rays; Radiation damage; Radiation hardness; Silicon photomultiplier
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/277651
Pubblicato in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal