Low frequency noise measurements in p-type Metal-Base Vertical Organic Transistors

We present, for the first time, Low Frequency Noise measurements in Vertical Organic Transistors. Investigated devices are p-type Metal-Base Organic Transistors employing Pentacene and Copper Phthalocyanine as active layers for the Emitter and Collector regions, respectively. The power spectral densities measured at the Base and Collector terminals follow a 1/f? law, with ??1, suggesting that noise is generated, in both cases, by a continuous distribution of traps. Crosscorrelation measurements show that Base current noise and Collector current noise are uncorrelated meaning that the physical origin of the noise measured at the Base and Collector terminals is different.