Nanomechanical studies of doped InGaP/GaAs epilayers

Articolo
Data di Pubblicazione:
2013
Abstract:
The Nanomechanical characteristics of InGaP semiconductor alloys doped with Si and Zn grown on GaAs (100) semi-insulating substrate is studied. The mechanical characteristics of the material such as hardness, stiffness, contact depth etc. were studied byNanoindentation technique with different probe geometries like Berkovich and Vickers. The results show significant variation in the mechanical parameters with respect to the tip geometry and dopant concentration. © 2013 AIP Publishing LLC.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Hardness; InGaP; Nanoindentation; nanomechanical; Reduced modulus
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/331839