Engineering single defects in silicon carbide bulk, nanostructures and devices

We will review recent demonstrations of single photon emission in different silicon carbide (SiC) polytypes, in both bulk and nano-structured form. Due to well established doping, and microand nanofabrication procedures deep defects photoluminescence (PL) can be electrically excited and incorporated in SiC nanomaterials. Finally we will report on preliminary results to incorporate near infrared defects in SiC nanoparticles.