Controlled vapor-phase synthesis of cobalt oxide nanomaterials with tuned composition and spatial organization

Cobalt oxide nanostructures are deposited by Chemical Vapor Deposition (CVD) on Si(100) substrates at temperatures between 300 and 550 °C, using for the first time a novel Co(II) adduct as molecular precursor [Co(hfa)2.TMEDA; hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate, TMEDA = N,N,N',N'-tetramethylethylenediamine]. The preparation is conducted either under dry (O2) or wet (O2+H2O) oxygen atmospheres, at total pressures of 3.0 or 10.0 mbar. The obtained results evidence that, upon dry O2 at 10.0 mbar, the initial nucleation of CoO occurs, followed by its progressive oxidation to Co3O4 during the subsequent growth stages. In a different way, cobalt monoxide can be selectively obtained at 3.0 mbar. In all cases, water vapor acts as an oxidant towards cobalt, favoring the formation of Co3O4 phases with a more pronounced {111} and {110}-type faceting. Structural, compositional and morphological characterization evidences the possibility of obtaining high purity CoO/Co3O4 systems with tailored morphological features, from films to columnar nanostructures, thus highlighting the potential and versatility of the proposed synthetic strategy.