Publication Date:
1995
abstract:
We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.
Iris type:
01.01 Articolo in rivista
Keywords:
SURFACE PHOTOVOLTAGEE; PHOTOEMISSION; HETEROJUNCTIONS
List of contributors:
Ottaviani, Carlo; Perfetti, Paolo; Quaresima, Claudio
Published in: