Data di Pubblicazione:
1995
Abstract:
We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
SURFACE PHOTOVOLTAGEE; PHOTOEMISSION; HETEROJUNCTIONS
Elenco autori:
Ottaviani, Carlo; Perfetti, Paolo; Quaresima, Claudio
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