Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations showthe presence of Ga/GaAs core-shell structures that we validate experimentally.Afully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.