1300°c annealing of 1×10²⁰ al⁺ ion implanted 3C-SiC

The results of the first experiments for achieving the thermal equilibrium during 1300 °C annealing of 1×10 cm ion implanted Al in 3C-SiC are shown. X-ray diffraction, through reciprocal space maps and 2? scans, characterizes the 3C-SiC lattice recovery. The ohmicity achievement of Ni/Al/Ti/3C-SiC contacts indicates the onset of a measurable electrical activation of the implanted Al, which is qualified through the value of the implanted layer sheet resistance.