Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications Voltage doubler rectifier characterization up to T=300 degrees C

A voltage doubler rectifier for hostile environments, in particular at high temperatures, is presented. The system consists of a clamper section and a single diode rectifier working at higher temperatures with respect to the conventional operating thermal domain of silicon electronics. Both sections are realized with integrated 4H-SiC Schottky diodes. The rectified output amplitude signal voltage increases with the temperature due to the corresponding diode threshold voltage lowering.