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Preparation and characterization of tungsten tips for scanning tunneling microscopy

Academic Article
Publication Date:
1994
abstract:
Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (~10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.
Iris type:
01.01 Articolo in rivista
Keywords:
STM TUNGSTEN ANNEALING SPATIAL RESOLUTION HIGH VACUUM AUGER ELECTRON SPECTROSCOPY ETCHING USES SURFACE CONTAMINATION
List of contributors:
Paparazzo, Ernesto; Cricenti, Antonio; Selci, Stefano
Authors of the University:
CRICENTI ANTONIO
Handle:
https://iris.cnr.it/handle/20.500.14243/189472
Published in:
REVIEW OF SCIENTIFIC INSTRUMENTS
Journal
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URL

http://dx.doi.org/10.1063/1.1144891
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