Effects of the growth rate on the quality of 4H silicon carbide films for MOSFET applications

Academic Article
Publication Date:
2014
abstract:
[object Object]
Iris type:
01.01 Articolo in rivista
Keywords:
Density of interface state traps; Growth rate; Surface morphology
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/279524
Published in:
MATERIALS SCIENCE FORUM
Series