Physics-based modeling of AlGaAs tunnel junction VCSELs: a comparative appraisal

In this paper, we adopt our in-house physics-based solver VENUS (Vcsel Electro-optho-thermal NUmerical Simulator) to assess the static output characteristics of an AlGaAs/GaAs TJ-VCSEL emitting at 850 nm. To this aim, VENUS is extended to exploit a combined drift-diffusion model and NEGF formalism, that accurately captures tunneling effects across the TJ. The results are compared to a commercial pin-like VCSEL, at temperatures ranging from 20 to 110°C, to cover a broad set of operations from room temperature to harsh environments.