Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have studied a high growth rate process to grow a thick epitaxial layer (250 mu m) of 4H-SiC and, in order to estimate the quality of the epitaxial layer, an optical characterization was done through Photoluminescence (PL) spectroscopy for stacking fault defect evaluation. Micro Raman spectroscopy was used for simultaneous determination of both carrier lifetime and induced carriers in equilibrium. We have compared these results with other two samples with an epitaxial layer of 100 micron, obtained with two different growth rates, 60 and 90 mu m/h, respectively. From Raman measurements it has been observed that both the growth rate and the grown epitaxial layer thickness have an effect on the measured carrier lifetime. A comparison between different kinds of stacking faults (SF) was done, evaluating the influence of these defects on the carrier lifetime as a function of the injection level and it was observed that only at a low injection is the effect on the carrier lifetime low.