THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS

Academic Article
Publication Date:
1993
abstract:
Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported
Iris type:
01.01 Articolo in rivista
Keywords:
Schottky barrier devices; Semiconductors
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/188802
Published in:
ELECTRONICS LETTERS
Journal