RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for <100> axial dechanneling of He in silicon

[100] axial RBS-channeling spectra of deep as-implanted Si samples were simulated, using an empirical formula describing the dechanneling. The formula was obtained by dechanneling data in perfect [100] silicon below amorphous Si films. In fact, a single empirical formula fitted these data versus the He energy (1-2 MeV), the film area densities (0-1.3 x 10(18) at./cm2) and the depth in the substrate (0-1 mum). Under the assumption that the dechanneling due to an amorphous layer is equal to that of an equivalent amount of displaced atoms in a perfect crystal, the formula was used to obtain the damage profile of as-implanted samples from RBS-channeling spectra.