Electrical characterization of GaSb buried p-n junctions

Buried GaSb junctions were realized through Zn diffusion in Te-doped GaSb bulk crystals, the p-dopant being supplied through the epitaxial deposition of a heavily Zn-doped GaAs layer on GaSb. Structural and electrical investigations confirm the build-up of buried junctions, induced by Zn diffusion within GaSb, with satisfying rectifying properties. Surprisingly, the p-n junctions are formed more deeply with respect to the Zn diffusion front. A local rising up of the native acceptor density is assumed to drive the p-type conductivity conversion of the GaSb substrate beyond the Zn penetration depth.