Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Abstract

Publication Date:

2010

Iris type:

04.02 Abstract in Atti di convegno

Keywords:

InGaP/GaAs; Interface; Chemical composition; Electron beam methods

List of contributors:

Grillo, Vincenzo; Frigeri, Cesare

Authors of the University:

GRILLO VINCENZO

Handle:

https://iris.cnr.it/handle/20.500.14243/99698