Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield

The possibilities and limitations of non-destructive extended defect characterization techniques, i.e. X-ray topography, carrier recombination imaging and laser scattering tomography are illustrated by a case study whereby a dislocation problem occurred during the local isolation step of a CMOS compatible diode process. It is shown that the diode yield is correlated with the presence of dislocations observed after the full process. The ''in process'' application of the techniques is illustrated by investigating defect formation after different local isolation processes