Trilayer Electron-beam Lithography and Surface Preparation for Sub-micron Schottky Contacts on GaAs Heterostructures

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1x1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes.