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An EBIC method for the quantitative determination of dopant concentration at striations in LEC GaAs

Conference Paper
Publication Date:
1987
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
EBIC; GaAs; dopant concentration; striations
List of contributors:
Frigeri, Cesare
Handle:
https://iris.cnr.it/handle/20.500.14243/126018
Book title:
Microscopy of Semiconducting Materials 1987
Published in:
INSTITUTE OF PHYSICS CONFERENCE SERIES
Series
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