Schottky barrier tunability in Al/ZnSe interfaces

The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (0 0 1) c(2 × 2), ZnSe (0 0 1) 2 × 1, or ZnSe (0 0 1) 1 × 1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on the first two types of interfaces, the p-type Schottky barrier was 0.24 eV lower for the third type of interface.