Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers
Conference Paper
Publication Date:
1997
abstract:
Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
DSL; SPC; SPL; ingot
List of contributors:
Gilioli, Edmondo; Fornari, Roberto
Book title:
Defect Recognition and Image Processing in Semiconductors 1997
Published in: