Influence of the ingot and wafer annealing on the homogeneity of Fe-doped semi-insulating InP wafers

Ingots and wafers of semiinsulating Pe-doped InP were submitted to different thermal treatments. The influence that these treatments have on the electrical properties and the uniformity of the wafers was studied using several experimental techniques: Hall effect, chemical photoetching (DSL), Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). The optimal annealing conditions are discussed on the basis of these results.