Metal-organic chemical vapor deposition of CeO2 < 100 > oriented films on no-rolled Hastelloy C276
Articolo
Data di Pubblicazione:
2001
Abstract:
MOCVD has been applied to the first successful deposition of CeO 2 ?100? oriented films on no-rolled Hastelloy C276. The presently found columnar grain morphologies have been related to the zone model proposed by Mochvan and Demchishin for physical vapor deposition processes. The fiber texture strongly depends on the deposition temperature.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
THIN-FILMS; BUFFER LAYERS; MOCVD; CERIUM OXIDE; PRECURSORS
Elenco autori:
LO NIGRO, Raffaella
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