Spectroscopy and CW first laser operation of Yb-doped Gd3(Al0.5Ga0.5)5O12 crystal

We present the spectroscopic characterization and laser operation of a 2%at. Yb doped Gd3(Al0.5Ga0.5)5O12 (Yb:GAGG) crystal, grown with the Czochralski method. We determined the absorption and the emission spectrum, the upper level lifetime, and the thermal conductivity. The internal disordered structure determines a significant broadening of the emission band (12.1 nm FWHM) with respect to the parent composition Yb:GGG (8 nm FWHM). The laser performances were evaluated on an end pumped cavity, using a CW semiconductor laser as the pump source. We obtained a maximum slope efficiency of 60.8% and an optical to optical efficiency of 46.0%, with a maximum output power of 4 W, limited only by the available pump power. The tuning range extends from 995 nm to 1050 nm. To our knowledge this is the first spectroscopic investigation and the first assessment of the laser performance of an Yb:GAGG crystal with this composition (i.e. Al/Ga balance = 0.5/0.5).