Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications

The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses.