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A novel mechanism to explain wafer bending during the growth of SiC on Si
Conference Poster
Publication Date:
2008
Iris type:
04.03 Poster in Atti di convegno
Keywords:
SiC; Growth; Bending
List of contributors:
Attolini, Giovanni; Frigeri, Cesare; Bosi, Matteo; Watts, BERNARD ENRICO
Authors of the University:
BOSI MATTEO
Handle:
https://iris.cnr.it/handle/20.500.14243/99312