EBIC characterization of oxygen precipitation and denuded zone in intrinsically gettered P-type Czochralski silicon

Electron beam induced current (EBIC) technique has been successfully used to characterize intrinsically gettered Czochralski silicon. Three different annealing sequences for the intrinsic gettering process have been studied. The impact of each thermal history on denuded zone thickness and in-depth homogeneity, as well as on lifetime degradation in silicon substrates, has been evaluated. EBIC results have been found in good agreement with surface photovoltage measurements and microscopical inspections after chemical etching.