Characterisation of AlxIn1-xAs/InP heterointerfaces by transmission electron microscopy

Lattice matched AlxIn1-xAs epitaxial layers grown by molecular beam epitaxy on InP (100) substrates are investigated by Transmission Electron Microscopy and Double Crystal X-ray Diffractometry. Four different regions close to the Alx(I)n(1-x)As/InP heterointerfaces can be detected. The first region, located at the heterointerface is caused by an intermixing of P and As atoms, while the other regions are caused by a small gradient of In content in the epilayer.