Analysis of CNTFETs operating in subthreshold region for low power digital applications

The aim of this paper is to characterize and tomodel the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for low power applications. In particular we refer to Schottky Barrier (SB) CNTFETs, because these devices have a better performance when they operate in sub-threshold region. In this way it is possible to evaluate the noise margin and output voltage swing, necessary to digital circuits design.