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Raman identification of polymorphs in pentacene films

Academic Article
Publication Date:
2016
abstract:
We use Raman spectroscopy to characterize thin films of pentacene grown on Si/SiOx by Supersonic Molecular Beam Deposition (SuMBD). We find that films up to a thickness of about 781 Å (~ 52 monolayers) all belong to the so-called thin-film (TF) phase. The appearance with strong intensity of some lattice phonons suggests that the films are characterized by good intra-layer order. A comparison of the Raman spectra in the lattice and CH bending spectral regions of the TF polymorph with the corresponding ones of the high-temperature (HT) and low-temperature (LT) bulk pentacene polymorphs provides a quick and nondestructive method to identify the different phases.
Iris type:
01.01 Articolo in rivista
Keywords:
Pentacene; Polymorphism; Raman spectroscopy
List of contributors:
Iannotta, Salvatore; Toccoli, Tullio
Authors of the University:
TOCCOLI TULLIO
Handle:
https://iris.cnr.it/handle/20.500.14243/357407
Published in:
CRYSTALS
Journal
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URL

https://www.mdpi.com/2073-4352/6/4/41
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