InGaAs/GaAs quantum wells: A standard photoluminescence system?

In this paper we report ultimate photoluminescence measurements on InGaAs/GaAs strained quantum-wells. The very narrow linewidth of the free-exciton recombination allows a test of the existing theories on disorder broadening, as well as the resolution of the recombination of free excitons from that of excitons localized at the interface. Finally, the effects of irradiation of the samples with deuterium are reported. The obtained results are compared with those existing for GaAs/GaAlAs quantum wells, thus showing that InGaAs/GaAs can provide a standard for the photoluminescence of quantum-wells.