12 W X-band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules

The chip-set for the transmitting power lineup of satellite SAR antenna T/R modules has been designed and implemented exploiting a 2- ?m GaInP-GaAs heterojunction bipolar transistor (HBT) technology suitable for space applications. The HBT technology features an integrated emitter ballast resistor that enables high-power density operation without suffering thermal runaway phenomena. Two monolithic microwave integrated circuit (MMIC) driver amplifiers and a MMIC HPA are described: the drivers exhibit small-signal gains exceeding 21 dB and P1 dB output power of about 28 and 29 dBm, respectively, in a 2-GHz bandwidth and CW condition. The HPA delivers more than 40-dBm power at about 2.5-dB gain compression and power-added efficiency (PAE) exceeding 36% in a 700-MHz bandwidth in pulsed operation. Its peak performance at the center of the band are 40.9-dBm output power and 45% PAE. These performance are obtained within tight de-rating conditions for space applications.