XPS INVESTIGATION ON AMORPHOUS SILICON NITRIDE (a-SINX) CHEMICAL-STRUCTURE

Abstract
Data di Pubblicazione:
1988
Abstract:
Amorphous silicon nitride a-SiNx (0<=x<=1.6) thin films, prepared by dual ion beam sputtering, were investigated by means of high energy resolution XPS. The contribution of Si0Si4-n Nn(n=0ยทยทยท4) configurations to the total Si2p level was determined. The nitrogen-induced chemical shift and broadening of Si2p core level were evaluated respectively as 0.6 and 0.22 ev per attached nitrogen. Artifacts due to Ar-ion sputtering are also discussed.
Tipologia CRIS:
01.05 Abstract in rivista
Keywords:
Chemical Structure; Dual Ion Beam Sputtering; Nitrogen-induced Chemical Shift; X-ray Photoelectron Spectroscopy
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/175616
Pubblicato in:
SIA. SURFACE AND INTERFACE ANALYSIS
Journal