Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates
Academic Article
Publication Date:
2001
abstract:
We investigate the In-composition of InxGa1-xAs ternary layers epitaxially grown by molecular beam epitaxy. The epilayers of different indium content (mole fraction 0.2
Iris type:
01.01 Articolo in rivista
List of contributors:
Giannini, Cinzia; DE CARO, Liberato
Published in: