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Multilayer silicene: clear evidence

Articolo
Data di Pubblicazione:
2016
Abstract:
One year after the publication of the seminal paper on monolayer 3X3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial sqrt3Xsqrt3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study that multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200 °C), while three-dimensional growth of silicon crystallites takes place at higher temperatures, (~300 °C). This transition to bulk-like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
multilayer silicene; surface x-ray diffraction; LEED; AES; STM; Raman spectroscopy
Elenco autori:
DE PADOVA, IRENE PAOLA; Paci, Barbara; Generosi, Amanda; Olivieri, Bruno; Ottaviani, Carlo; Quaresima, Claudio
Autori di Ateneo:
DE PADOVA IRENE PAOLA
GENEROSI AMANDA
OTTAVIANI CARLO
PACI BARBARA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/323447
Pubblicato in:
2D MATERIALS
Journal
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URL

http://iopscience.iop.org/article/10.1088/2053-1583/3/3/031011/
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