Data di Pubblicazione:
2016
Abstract:
One year after the publication of the seminal paper on monolayer 3X3 reconstructed silicene grown
on a silver (111) substrate, evidence of the synthesis of epitaxial sqrt3Xsqrt3 reconstructed multilayer
silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached
in the former case, in the latter, the mere existence of multilayer silicene was questioned and strongly
debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study that
multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200 °C),
while three-dimensional growth of silicon crystallites takes place at higher temperatures, (~300 °C).
This transition to bulk-like silicon perfectly explains the various data presented and discussed in the
literature and solves their conflicting interpretations.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
multilayer silicene; surface x-ray diffraction; LEED; AES; STM; Raman spectroscopy
Elenco autori:
DE PADOVA, IRENE PAOLA; Paci, Barbara; Generosi, Amanda; Olivieri, Bruno; Ottaviani, Carlo; Quaresima, Claudio
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