GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS/GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES
Academic Article
Publication Date:
1993
abstract:
The strain distribution in quantum wells of InxGa1-xAs/GaAs (x<0.25) is investigated by glancing-angle EXAFS. The measures have been performed at glancing angles below the critical angle for total reflection in order to avoid substrate contributions to the signal.
Iris type:
01.01 Articolo in rivista
List of contributors:
Turchini, Stefano; Alagna, Lucilla; Prosperi, Tommaso; Martelli, Faustino; Bruni, MARIA RITA
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