GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS/GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES

The strain distribution in quantum wells of InxGa1-xAs/GaAs (x<0.25) is investigated by glancing-angle EXAFS. The measures have been performed at glancing angles below the critical angle for total reflection in order to avoid substrate contributions to the signal.