Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3

Academic Article
Publication Date:
2015
Iris type:
01.01 Articolo in rivista
Keywords:
4H-SiC; Post-Oxidadion Annealing; Scanning Capacitance Microscopy; Scanning Spreading Resistance Microscopy; [object Object
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/283612
Published in:
MATERIALS SCIENCE FORUM
Series