Data di Pubblicazione:
2001
Abstract:
We show that either a blueshift or a redshift of the fundamental transition energy can be observed in vertical arrays of InAs/GaAs quantum dots, depending on the spacer thicknesses, and explained by including strain, indium segregation, and Coulomb effects.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
DETERMINISTIC NUMERICAL-METHODS; ELECTRONIC-STRUCTURE; STRAIN DISTRIBUTION; GROWTH; PATTERNS
Elenco autori:
Lazzarini, Laura; Gucciardi, PIETRO GIUSEPPE; Frigeri, Paola; Salviati, Giancarlo
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