Multiscale simulation of MOS systems based on high-kappa oxides

We report on a multiscale simulation approach that includes both macroscopic drift-diffusion current model and quantum tunneling model. The models are solved together in a self-consistent way inside a single simulation package. As an example, we study the subthreshold transfer characteristics of MOS transistors based on high-kappa oxides. We compare the high-kappa gates based on HfO2 and ZrO2 with a SiO2 gate of the same equivalent thickness and show the effect of the tunneling current on transistor performance.